NXP Semiconductors BF901-TAPE-7 Mfr Package Description: PLASTIC, MICRO MINIATURE PACKAGE-4 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: SOURCE Number of Elements: 1 Transistor Application: AMPLIFIER Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.2000 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: DUAL GATE, ENHANCEMENT Transistor Type: RF SMALL SIGNAL Drain Current-Max (ID): 0.0300 A Highest Frequency Band: ULTRA HIGH FREQUENCY BAND DS Breakdown Voltage-Min: 12 V